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    Part Img CY7C1314BV18-200BZXC datasheet by Cypress Semiconductor

    • 18-Mbit QDR -II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
    • Original
    • Yes
    • Unknown
    • Obsolete
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
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    CY7C1314BV18-200BZXC datasheet preview

    CY7C1314BV18-200BZXC Frequently Asked Questions (FAQs)

    • The CY7C1314BV18-200BZXC has an industrial temperature range of -40°C to +85°C, and a commercial temperature range of 0°C to +70°C.
    • Cypress recommends using a CDC circuit or a FIFO-based CDC solution to ensure data integrity when crossing clock domains. The device's built-in FIFO and clock domain crossing features can be used to implement CDC.
    • The CY7C1314BV18-200BZXC has a maximum data transfer rate of 200 MHz, with a maximum bandwidth of 3.2 Gbps.
    • The device has a low-power mode that can be enabled by setting the SLEEP pin low. Additionally, the device's power consumption can be reduced by using the built-in power-down feature, which can be controlled through the Power-Down (PD) pin.
    • The CY7C1314BV18-200BZXC has a 4,096-word deep FIFO, which can be configured as a single 4,096-word deep FIFO or as two 2,048-word deep FIFOs.
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