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    Part Img CY7C1381D-100BZI datasheet by Cypress Semiconductor

    • 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
    • Original
    • No
    • No
    • Obsolete
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
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    CY7C1381D-100BZI datasheet preview

    CY7C1381D-100BZI Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for CY7C1381D-100BZI is 0°C to 70°C (commercial grade) and -40°C to 85°C (industrial grade).
    • The CY7C1381D-100BZI requires a single 100 MHz clock signal applied to the K clock input pin. The clock signal should be a stable, low-jitter signal with a duty cycle of 40-60%.
    • The maximum data transfer rate for the CY7C1381D-100BZI is 800 MB/s, which is achieved using the DDR2 interface at a clock frequency of 100 MHz.
    • The CY7C1381D-100BZI requires a specific power-up and power-down sequencing to ensure proper operation. The VDDQ power supply should be powered up before the VDD power supply, and the VDD power supply should be powered down before the VDDQ power supply.
    • The recommended termination scheme for the CY7C1381D-100BZI is to use a parallel termination scheme with a 50 ohm resistor connected between the data signal and VTT (midpoint of VDDQ and VSSQ).
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