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    Part Img CY7C1460AV25-200BZC datasheet by Cypress Semiconductor

    • 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
    • Original
    • No
    • Obsolete
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
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    CY7C1460AV25-200BZC datasheet preview

    CY7C1460AV25-200BZC Frequently Asked Questions (FAQs)

    • The CY7C1460AV25-200BZC has an industrial temperature range of -40°C to +85°C, making it suitable for a wide range of applications.
    • The CY7C1460AV25-200BZC has a self-refresh mode that can be enabled by asserting the SREF pin low. This mode reduces power consumption by stopping the clock and disabling the output buffers.
    • The CY7C1460AV25-200BZC supports a maximum clock frequency of 200 MHz, making it suitable for high-speed applications.
    • The CY7C1460AV25-200BZC has a built-in error detection and correction mechanism. During write operations, the device performs a cyclic redundancy check (CRC) to detect errors. If an error is detected, the device can be configured to retry the write operation or generate an interrupt to alert the system.
    • The CY7C1460AV25-200BZC has a read latency of 2 clock cycles and a write latency of 1 clock cycle, making it suitable for applications that require fast data access.
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