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    Part Img CY7C1460AV25-200BZXC datasheet by Cypress Semiconductor

    • 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
    • Original
    • Yes
    • Yes
    • Obsolete
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
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    CY7C1460AV25-200BZXC datasheet preview

    CY7C1460AV25-200BZXC Frequently Asked Questions (FAQs)

    • The CY7C1460AV25-200BZXC has an industrial temperature range of -40°C to +85°C, making it suitable for use in a wide range of applications.
    • To implement self-refresh mode, you need to assert the SREF input pin low and ensure that the clock (CLK) is stopped. This will put the device into a low-power state, reducing power consumption.
    • The CY7C1460AV25-200BZXC supports a maximum clock frequency of 200 MHz, making it suitable for high-speed applications.
    • To ensure data retention during power-down, you need to follow the power-down sequence specified in the datasheet, which includes de-asserting the chip enable (CE) and write enable (WE) pins, and then reducing the voltage supply to the device.
    • The CY7C1460AV25-200BZXC has a read latency of 2 clock cycles and a write latency of 1 clock cycle, making it suitable for applications that require fast data access.
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