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    Part Img CY7C1518KV18-300BZXC datasheet by Cypress Semiconductor

    • 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
    • Original
    • Yes
    • Unknown
    • Transferred
    • 3A991.B.2.A
    • 8542.32.00.41
    • 8542.32.00.40
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    CY7C1518KV18-300BZXC datasheet preview

    CY7C1518KV18-300BZXC Frequently Asked Questions (FAQs)

    • The CY7C1518KV18-300BZXC has an industrial temperature range of -40°C to +85°C, making it suitable for use in a wide range of applications.
    • The CY7C1518KV18-300BZXC has a built-in JTAG interface that can be used for debugging and programming. You can use the Cypress Semiconductor's JTAG programming tool, such as the CY3250-Universal-Programmer, to program and debug the device.
    • The CY7C1518KV18-300BZXC supports clock frequencies up to 300 MHz, making it suitable for high-speed applications.
    • The CY7C1518KV18-300BZXC has a specific power-up and power-down sequence that must be followed to ensure proper operation. Refer to the datasheet for the recommended power-up and power-down sequences.
    • The CY7C1518KV18-300BZXC has a latency of 2.5 clock cycles for read operations and 3 clock cycles for write operations.
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