Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img DMG1012T-7 datasheet by Diodes Incorporated

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 630MA SOT-523
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
    • Find it at Findchips.com

    DMG1012T-7 datasheet preview

    DMG1012T-7 Frequently Asked Questions (FAQs)

    • A recommended PCB layout for optimal thermal performance would be to have a large copper area connected to the thermal pad, with multiple vias to dissipate heat effectively. A minimum of 2oz copper thickness is recommended.
    • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet. Use a voltage regulator or a voltage divider network to set the gate-source voltage (Vgs) between 2V to 5V, and ensure the drain-source voltage (Vds) is within the recommended range.
    • To prevent ESD damage, handle the device in an ESD-protected environment, wear an ESD strap, and use ESD-safe tools and materials. Avoid touching the device's pins or leads, and use a wrist strap or mat to discharge static electricity.
    • Yes, the DMG1012T-7 is suitable for high-frequency switching applications up to 1MHz. However, ensure proper PCB layout, decoupling, and filtering to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI).
    • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10Ω to 100Ω. A higher value can reduce switching losses, but may increase switching time.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel