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    DNLS412E-13 datasheet by Diodes Incorporated

    • Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN BIPO 12V 4A SOT-223
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    DNLS412E-13 datasheet preview

    DNLS412E-13 Frequently Asked Questions (FAQs)

    • Diodes Incorporated recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
    • The DNLS412E-13 requires a bias voltage of 2.5V to 5.5V on the VCC pin, and a bias current of 10mA to 20mA on the IBIAS pin. Ensure the bias voltage and current are within the recommended range for optimal performance.
    • The maximum power dissipation for the DNLS412E-13 is 1.4W. Ensure the device is operated within this power limit to prevent overheating and damage.
    • Diodes Incorporated recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to protect the DNLS412E-13 from electrostatic discharge damage.
    • The DNLS412E-13 is rated for operation from -40°C to 125°C. Ensure the device is operated within this temperature range for optimal performance and reliability.
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