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    EC103D1T/R datasheet by NXP Semiconductors

    • Sensitive gate thyristor - I<sub>GT</sub>: 0.2 (min 0.02) mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V
    • Original
    • Yes
    • Obsolete
    • EAR99
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    EC103D1T/R datasheet preview
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