The FM25V20A-DGQTR is a 2-Mbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 121 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25V20A-DGQTR performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25V20A is capable of supporting
1014 read/write cycles, or 10 million times more write cycles than
EEPROM.
These capabilities make the FM25V20A ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25V20A provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25V20A uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
extended temperature range of -40 °C to +105 °C.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
The FM25V20A-DGQTR has a maximum of 100,000 write cycles per sector, and 1,000,000,000 (1 billion) total write cycles for the entire device.
The FM25V20A-DGQTR has a built-in power-fail detection and protection circuit that prevents data corruption during power failures. It also has a write-protect feature that prevents accidental writes during power-up or power-down.
The recommended operating voltage range for the FM25V20A-DGQTR is 2.7V to 3.6V. Operating outside of this range may affect the device's performance and reliability.
The FM25V20A-DGQTR has a built-in secure erase function that can be implemented by writing a specific command sequence to the device. This sequence is typically 0x66, 0x99, and then 0x00. Refer to the datasheet for more information.
The maximum clock frequency for the FM25V20A-DGQTR is 20 MHz. Operating at higher clock frequencies may cause the device to malfunction or fail.
