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    Part Img FMMT415TD datasheet by Diodes Incorporated

    • Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR AVALANCHE NPN SOT23-3
    • Original
    • Yes
    • Yes
    • Active
    • EAR99
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    FMMT415TD datasheet preview

    FMMT415TD Frequently Asked Questions (FAQs)

    • A good PCB layout for the FMMT415TD should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device. A minimum of 2oz copper thickness is recommended. Refer to the Diodes Incorporated application note AN-114 for more details.
    • The FMMT415TD requires a bias voltage of 2.5V to 5.5V. Ensure the bias voltage is stable and noise-free. A decoupling capacitor of 10nF to 100nF should be placed close to the device. Refer to the datasheet for more information on biasing and decoupling.
    • The FMMT415TD has an operating temperature range of -40°C to 125°C. However, the device's performance and reliability may degrade above 85°C. Ensure proper thermal management and heat sinking to maintain a safe operating temperature.
    • The FMMT415TD is optimized for low-frequency applications up to 100 kHz. While it can be used in high-frequency applications, its performance may degrade. For high-frequency applications, consider using a device specifically designed for high-frequency operation.
    • The FMMT415TD has built-in ESD protection, but additional protection measures can be taken. Use a TVS diode or a zener diode to protect against overvoltage. Ensure the device is handled and stored in an ESD-safe environment.
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