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    HEF4012BP datasheet by Philips Semiconductors

    • Dual 4-input NAND gate
    • Original
    • No
    • Unknown
    • Transferred
    • 8542.39.00.01
    • 8542.39.00.00
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    HEF4012BP datasheet preview

    HEF4012BP Frequently Asked Questions (FAQs)

    • The recommended operating voltage range for the HEF4012BP is 3V to 15V, although it can operate down to 2V with reduced performance.
    • To ensure proper operation, connect a 0.1uF ceramic capacitor between VDD and VSS, and a 10uF electrolytic capacitor between VDD and GND. Additionally, use a low-ESR capacitor for VDD and a high-frequency capacitor for VSS.
    • The maximum clock frequency that the HEF4012BP can handle is approximately 10MHz, although this can vary depending on the specific application and operating conditions.
    • The output enable (OE) pin is active-low, meaning that the output is enabled when OE is low and disabled when OE is high. Connect OE to VSS to enable the output or to VDD to disable the output.
    • The propagation delay time for the HEF4012BP is typically around 10-20ns, although this can vary depending on the specific application and operating conditions.
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