HGTP10N50E1D datasheet by Harris Semiconductor

HGTP10N50E1D Frequently Asked Questions (FAQs)

• What is the maximum operating temperature range for the HGTP10N50E1D?
  The maximum operating temperature range for the HGTP10N50E1D is -55°C to 150°C.
• How do I ensure reliable operation of the HGTP10N50E1D in high-frequency applications?
  To ensure reliable operation of the HGTP10N50E1D in high-frequency applications, it is recommended to use a low-inductance package, minimize lead lengths, and use a proper PCB layout to reduce parasitic inductance and capacitance.
• What is the recommended gate drive voltage for the HGTP10N50E1D?
  The recommended gate drive voltage for the HGTP10N50E1D is between 10V to 15V, with a maximum gate-source voltage of ±20V.
• How do I protect the HGTP10N50E1D from electrostatic discharge (ESD)?
  To protect the HGTP10N50E1D from ESD, it is recommended to handle the device with anti-static wrist straps, mats, and packaging, and to use ESD-sensitive handling procedures.
• What is the maximum allowable power dissipation for the HGTP10N50E1D?
  The maximum allowable power dissipation for the HGTP10N50E1D is 125W, with a maximum junction temperature of 150°C.