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    HGTP10N50E1D datasheet by Harris Semiconductor

    • 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
    • Original
    • No
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    HGTP10N50E1D datasheet preview

    HGTP10N50E1D Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the HGTP10N50E1D is -55°C to 150°C.
    • To ensure reliable operation of the HGTP10N50E1D in high-frequency applications, it is recommended to use a low-inductance package, minimize lead lengths, and use a proper PCB layout to reduce parasitic inductance and capacitance.
    • The recommended gate drive voltage for the HGTP10N50E1D is between 10V to 15V, with a maximum gate-source voltage of ±20V.
    • To protect the HGTP10N50E1D from ESD, it is recommended to handle the device with anti-static wrist straps, mats, and packaging, and to use ESD-sensitive handling procedures.
    • The maximum allowable power dissipation for the HGTP10N50E1D is 125W, with a maximum junction temperature of 150°C.
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