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    HGTP7N60B3D datasheet by Harris Semiconductor

    • 600V / 1200V UFS Series IGBTs
    • Original
    • No
    • Transferred
    • EAR99
    • Find it at Findchips.com

    HGTP7N60B3D datasheet preview

    HGTP7N60B3D Frequently Asked Questions (FAQs)

    • The recommended PCB layout for optimal thermal performance involves placing the device on a thermal pad with a minimum size of 100mm², using a 2oz copper layer, and ensuring a minimum of 10mm clearance around the device for airflow.
    • To ensure reliable operation at high temperatures, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet, and to ensure good thermal coupling between the device and the heat sink.
    • The recommended gate drive circuits for the HGTP7N60B3D involve using a gate driver IC with a minimum output current of 2A, and a gate resistance of 10Ω or less. A bootstrap circuit can also be used to provide a high-side gate drive voltage.
    • To protect the device from overvoltage and overcurrent, it is recommended to use a voltage clamp circuit to limit the voltage across the device, and to use a current sense resistor and a comparator to detect overcurrent conditions.
    • The recommended ESD protection measures for the HGTP7N60B3D involve using ESD protection diodes on the gate and drain pins, and following proper handling and storage procedures to prevent ESD damage.
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