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    IRF142 datasheet by International Rectifier

    • TO-39 / TO-3 N-Channel HEXFET Power MOSFETs
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    • EAR99
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    IRF142 datasheet preview

    IRF142 Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRF142 is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides SOA curves for the device.
    • To ensure proper thermal management, the IRF142 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to keep the junction temperature (Tj) below 150°C. Additionally, the device should be operated within its recommended operating conditions to minimize power dissipation.
    • The recommended gate drive voltage for the IRF142 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power dissipation and reduce reliability.
    • Yes, the IRF142 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is capable of providing a fast and clean signal. Additionally, the device's parasitic capacitances and inductances should be minimized to prevent ringing and oscillations.
    • To protect the IRF142 from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and respond to overcurrent conditions.
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