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    IRF220 datasheet by International Rectifier

    • TO-3 N-Channel Hexfet Power MOSFETS
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    • EAR99
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    IRF220 datasheet preview

    IRF220 Frequently Asked Questions (FAQs)

    • The maximum SOA for the IRF220 is typically defined by the voltage and current ratings, but it's also dependent on the application and operating conditions. A general guideline is to ensure that the device operates within the boundaries of the SOA curve provided in the datasheet.
    • To ensure the IRF220 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive circuit should be capable of providing sufficient current to charge the gate capacitance quickly. A gate resistor value between 10Ω to 100Ω is recommended.
    • The maximum junction temperature (Tj) for the IRF220 is 175°C. It's essential to ensure that the device operates within this temperature range to prevent thermal runaway and ensure reliability.
    • Yes, the IRF220 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuit is capable of providing a fast switching signal.
    • To protect the IRF220 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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