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    Part Img IRF3708PBF datasheet by International Rectifier

    • 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF3708 with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com
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    IRF3708PBF datasheet preview

    IRF3708PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF3708PBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
    • To ensure proper thermal management, make sure to provide a heat sink with a thermal resistance of less than 1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K.
    • The recommended gate drive voltage for the IRF3708PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
    • Yes, the IRF3708PBF is suitable for high-frequency switching applications up to 1 MHz, but be aware of the increased switching losses and ensure proper thermal management.
    • Use a voltage clamp or a zener diode to protect the IRF3708PBF from overvoltage, and consider adding an overcurrent protection circuit, such as a current sense resistor and a comparator, to detect and respond to overcurrent conditions.
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