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    Part Img IRF3808PBF datasheet by International Rectifier

    • 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF3808 with Lead-Free Packaging.
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com
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    IRF3808PBF datasheet preview

    IRF3808PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF3808PBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
    • To ensure proper thermal management, make sure to provide a heat sink with a thermal resistance of less than 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, keep the ambient temperature below 50°C and avoid hot spots on the PCB.
    • The recommended gate drive voltage for the IRF3808PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, it's recommended to use a gate drive voltage of 12V to ensure optimal switching performance.
    • Yes, the IRF3808PBF is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic inductance when designing the circuit.
    • To protect the IRF3808PBF from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage across the device, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.
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