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    Part Img IRF3808SPBF datasheet by International Rectifier

    • 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3808S with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRF3808SPBF datasheet preview

    IRF3808SPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF3808SPBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
    • To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 4V to 10V, and a drain-source voltage (Vds) within the recommended range of 30V to 80V. Also, ensure the gate drive is sufficient to minimize switching losses.
    • For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Keep the drain and source pins as close as possible to the heat sink, and use thermal vias to dissipate heat efficiently.
    • Yes, the IRF3808SPBF is suitable for high-frequency switching applications up to 1 MHz. However, be aware of the increased switching losses and ensure proper thermal management to prevent overheating.
    • Use a voltage clamp or a zener diode to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current, and then shut down the device or reduce the current accordingly.
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