The IRF5305 can operate safely between -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C.
Power dissipation (PD) can be calculated using the formula: PD = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
The recommended gate drive voltage for the IRF5305 is between 10V to 15V, with a maximum gate-source voltage (Vgs) of ±20V.
Yes, the IRF5305 is suitable for high-frequency switching applications up to 1MHz, but the user should ensure that the device is properly cooled and the switching frequency is within the recommended range.
To protect the IRF5305 from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and add a current sense resistor to monitor the current. Also, consider using a protection circuit with a zener diode and a resistor to absorb voltage spikes.