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    Part Img IRF5305 datasheet by International Rectifier

    • HEXFET Power Mosfet
    • Original
    • No
    • Transferred
    • EAR99
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    IRF5305 datasheet preview

    IRF5305 Frequently Asked Questions (FAQs)

    • The IRF5305 can operate safely between -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C.
    • Power dissipation (PD) can be calculated using the formula: PD = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
    • The recommended gate drive voltage for the IRF5305 is between 10V to 15V, with a maximum gate-source voltage (Vgs) of ±20V.
    • Yes, the IRF5305 is suitable for high-frequency switching applications up to 1MHz, but the user should ensure that the device is properly cooled and the switching frequency is within the recommended range.
    • To protect the IRF5305 from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and add a current sense resistor to monitor the current. Also, consider using a protection circuit with a zener diode and a resistor to absorb voltage spikes.
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