Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRF531 datasheet by Harris Semiconductor

    • Power MOSFET Data Book 1990
    • Scan
    • No
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    IRF531 datasheet preview

    IRF531 Frequently Asked Questions (FAQs)

    • The IRF531 can operate from -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C for reliable operation.
    • To ensure the IRF531 is fully turned on, the gate-source voltage (VGS) should be at least 10V for a logic-level input, and the input signal should have a rise time of less than 10ns to prevent oscillations.
    • The recommended gate resistor value for the IRF531 is between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher value can help reduce oscillations, but may increase switching time.
    • Yes, the IRF531 can be used in high-frequency switching applications up to 1MHz, but the user should ensure that the gate drive is sufficient, and the layout is optimized to minimize parasitic inductance and capacitance.
    • To protect the IRF531 from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and a current sense resistor or a fuse to detect overcurrent conditions. Additionally, ensure the PCB layout is designed to minimize parasitic inductance and capacitance.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel