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    Part Img IRF630PBF datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A TO-220AB
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • Find it at Findchips.com
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    IRF630PBF datasheet preview

    IRF630PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF630PBF is -55°C to 175°C.
    • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V for optimal performance. Additionally, the drain-source voltage (Vds) should be within the recommended range of 200V to 500V.
    • The recommended gate resistor value for the IRF630PBF is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
    • To protect the IRF630PBF from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.
    • The maximum allowable power dissipation for the IRF630PBF is 125W at a case temperature of 25°C. However, this value can be derated based on the operating temperature and other factors.
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