The maximum junction temperature that the IRF640NLPBF can withstand is 175°C. This is not explicitly stated in the datasheet, but it is a common specification for MOSFETs in this class.
To ensure the IRF640NLPBF is fully turned on, you need to apply a gate-source voltage (Vgs) of at least 10V. This is because the threshold voltage (Vth) of the MOSFET is around 4V, and applying 10V or more ensures that the device is fully enhanced.
The maximum current that the IRF640NLPBF can handle is 18A. This is the maximum continuous drain current (Id) rating, and it's essential to ensure that your application does not exceed this limit to prevent overheating and damage to the device.
To protect the IRF640NLPBF from voltage spikes and transients, you can use a snubber circuit or a TVS (transient voltage suppressor) diode. These components can help absorb or clamp voltage transients and prevent them from damaging the MOSFET.
The recommended PCB layout for the IRF640NLPBF involves keeping the drain and source pins as close as possible to minimize parasitic inductance. You should also use a solid ground plane and a low-impedance power supply connection to ensure stable operation.
IRF640NLPBF datasheet
by International Rectifier
