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    Part Img IRF640NPBF datasheet by International Rectifier

    • 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF640N with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRF640NPBF datasheet preview

    IRF640NPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF640NPBF is -55°C to 175°C.
    • Yes, the IRF640NPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
    • To ensure proper cooling, provide a heat sink with a thermal resistance of less than 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the PCB layout and airflow around the device.
    • The recommended gate drive voltage for the IRF640NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
    • No, the IRF640NPBF is not suitable for linear amplifier applications due to its high power MOSFET characteristics. It's designed for switching applications only.
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