A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. P; Similar to IRF6691 shipped in tape and reel 1000 pieces
The maximum operating temperature range for the IRF6691TR1 is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the device's power handling capabilities at higher temperatures to ensure reliable operation.
To ensure proper biasing, follow the recommended gate-source voltage (Vgs) and drain-source voltage (Vds) ratings in the datasheet. Typically, a Vgs of 10-15V and a Vds of 30-40V are recommended for optimal performance. Additionally, ensure the gate drive circuitry is capable of providing sufficient current to charge and discharge the gate capacitance.
For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Use a heat sink with a thermal resistance of less than 1°C/W and apply a thin layer of thermal interface material (TIM) between the device and heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and ensure good heat dissipation.
Use a voltage clamp or a zener diode to limit the maximum voltage across the device. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Ensure the protection circuitry is designed to respond quickly to fault conditions to prevent damage to the device.
The IRF6691TR1 has an ESD rating of 2 kV (Human Body Model) and 150 V (Machine Model). Handle the device with ESD-protective equipment and follow proper ESD handling procedures to prevent damage. Use an ESD wrist strap or mat, and ensure the workspace is ESD-protected.
