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    Part Img IRF830PBF datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 4.5A TO-220AB
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    IRF830PBF datasheet preview

    IRF830PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF830PBF is -55°C to 175°C.
    • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V for optimal performance. Additionally, the drain-source voltage (Vds) should be within the recommended range of 30V to 100V.
    • The recommended gate resistor value for the IRF830PBF is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
    • To protect the IRF830PBF from overvoltage and overcurrent, use a voltage regulator or a zener diode to clamp the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
    • The maximum allowable power dissipation for the IRF830PBF is 125W at a case temperature of 25°C, but this value decreases as the temperature increases.
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