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    IRF840 datasheet by International Rectifier

    • 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
    • Original
    • No
    • No
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com
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    IRF840 datasheet preview

    IRF840 Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRF840 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device to 50% of its maximum current rating for continuous operation.
    • To ensure the IRF840 is fully turned on, the gate-source voltage (Vgs) should be at least 10V for a logic-level gate drive, and 15V for a standard gate drive. Additionally, the gate resistance should be minimized to reduce switching losses.
    • The maximum voltage rating for the IRF840 is 500V, but it's essential to consider the device's avalanche energy rating and ensure that the voltage rating is not exceeded during switching transients or fault conditions.
    • To protect the IRF840 from overcurrent and overvoltage, consider using a current sense resistor, overcurrent protection (OCP) circuitry, and a voltage clamp or transient voltage suppressor (TVS) to limit voltage transients.
    • The thermal resistance of the IRF840 is typically around 62°C/W (junction-to-case) and 125°C/W (junction-to-ambient) for the TO-220 package. This information is essential for thermal design and heat sink selection.
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