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    IRF841 datasheet by Harris Semiconductor

    • Power MOSFET Data Book 1990
    • Scan
    • No
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRF841 datasheet preview

    IRF841 Frequently Asked Questions (FAQs)

    • The SOA for the IRF841 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. A safe operating area can be determined by plotting the device's voltage and current ratings against the thermal resistance and maximum junction temperature.
    • To ensure the IRF841 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive circuit should be capable of sourcing sufficient current to charge the gate capacitance quickly. A gate resistor value of 10-20 ohms is typically recommended to prevent ringing and ensure a clean turn-on.
    • The maximum allowed dv/dt for the IRF841 is not explicitly stated in the datasheet, but it is typically limited by the device's internal capacitance and the risk of voltage overshoot. A dv/dt of 100-500 V/μs is a common guideline, but this may vary depending on the specific application and circuit design.
    • The IRF841 is not optimized for high-frequency switching applications due to its relatively high gate capacitance and internal resistance. It is better suited for low-frequency switching applications, such as DC-DC converters or motor control circuits, where the switching frequency is typically below 100 kHz.
    • To protect the IRF841 from overvoltage and overcurrent, a combination of voltage clamping devices (such as zener diodes or TVS diodes) and current sensing resistors can be used. Additionally, a fuse or circuit breaker can be used to disconnect the power supply in case of an overcurrent condition.
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