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    Part Img IRFB4620PBF datasheet by International Rectifier

    • 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRFB4620PBF datasheet preview

    IRFB4620PBF Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFB4620PBF is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides guidelines for calculating the SOA for power MOSFETs.
    • To ensure proper thermal management, it is essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device, using a heat sink with a low thermal resistance, and ensuring good airflow around the device.
    • The recommended gate drive voltage for the IRFB4620PBF is typically between 10V and 15V, depending on the specific application and required switching speed. However, it is essential to consult the datasheet and application notes for specific guidance on gate drive voltage and switching characteristics.
    • Yes, the IRFB4620PBF is suitable for high-frequency switching applications up to several hundred kHz. However, it is essential to consider the device's switching characteristics, including the rise and fall times, and ensure that the gate drive circuitry is capable of providing a clean, high-frequency signal.
    • To protect the IRFB4620PBF from electrostatic discharge (ESD), it is essential to handle the device with care, using anti-static wrist straps, mats, and packaging materials. Additionally, the device should be stored in a protective environment, and ESD-sensitive areas should be marked and identified.
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