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    IRFF130 datasheet by International Rectifier

    • TO-39 N-Channel HEXFET Power MOSFETs
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    IRFF130 datasheet preview

    IRFF130 Frequently Asked Questions (FAQs)

    • The maximum SOA for the IRF130 is typically defined by the voltage and current ratings, but it's also dependent on the application and operating conditions. As a general guideline, the SOA is typically limited by the maximum voltage rating of 100V and the maximum current rating of 18A.
    • To ensure the IRF130 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive should be able to provide sufficient current to charge the gate capacitance quickly. A gate resistor value of 10-20 ohms is typically recommended.
    • The thermal resistance of the IRF130 is typically around 1.5°C/W for the junction-to-case thermal resistance (RθJC) and 62°C/W for the junction-to-ambient thermal resistance (RθJA) when mounted on a standard PCB.
    • Yes, the IRF130 can be used in high-frequency switching applications, but it's essential to consider the switching losses, gate drive requirements, and thermal management. The IRF130 has a relatively low gate charge (Qg) of 12nC, making it suitable for high-frequency switching applications up to several hundred kHz.
    • To protect the IRF130 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to protect against overcurrent conditions.
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