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    Part Img IRFH5207TRPBF datasheet by International Rectifier

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 13A 8-PQFN
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com

    IRFH5207TRPBF datasheet preview

    IRFH5207TRPBF Frequently Asked Questions (FAQs)

    • The thermal resistance of the IRFH5207TRPBF is typically around 2.5°C/W (junction-to-ambient) and 1.5°C/W (junction-to-case). However, this value can vary depending on the specific application and PCB design.
    • Yes, the IRFH5207TRPBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate charge, and layout parasitics to ensure reliable operation.
    • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and avoiding excessive power dissipation.
    • The recommended gate drive voltage for the IRFH5207TRPBF is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
    • Yes, the IRFH5207TRPBF can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to avoid uneven current sharing.
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