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    Part Img IRFI540NPBF datasheet by International Rectifier

    • 100V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPak package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRFI540NPBF datasheet preview

    IRFI540NPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFI540NPBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation above 150°C to ensure reliable operation.
    • To calculate the power dissipation of the IRFI540NPBF, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The formula is: Pd = (Vds * Ids) + (Rth * Ids^2), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, and Rth is the thermal resistance.
    • The recommended gate drive voltage for the IRFI540NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching speed and reduce losses, but it also increases the risk of gate oxide damage.
    • Yes, the IRFI540NPBF is suitable for high-frequency switching applications up to 1MHz. However, you need to consider the device's switching losses, gate charge, and thermal performance to ensure reliable operation. You may also need to add external components, such as gate resistors and capacitors, to optimize the switching performance.
    • To protect the IRFI540NPBF from overvoltage and overcurrent, you can use external components such as voltage regulators, zener diodes, and current sense resistors. You can also implement overvoltage and overcurrent protection circuits, such as a crowbar circuit or a foldback current limiter, to prevent damage to the device.
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