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    IRFM150 datasheet by International Rectifier

    • HEXFET Transistor
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    IRFM150 datasheet preview

    IRFM150 Frequently Asked Questions (FAQs)

    • The IRFM150 can operate safely between -55°C to 150°C, but the maximum junction temperature (TJ) should not exceed 150°C.
    • The IRFM150 has a high power density, so it's essential to provide adequate heat sinking. Use a heat sink with a thermal resistance of 1°C/W or lower, and apply a thin layer of thermal interface material (TIM) to the device.
    • The recommended gate drive voltage for the IRFM150 is between 10V to 15V, with a maximum gate-source voltage of ±20V.
    • Use a voltage clamp or a zener diode to protect the IRFM150 from overvoltage. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current, and then shut down the device or reduce the current accordingly.
    • The maximum allowable drain-source voltage (Vds) for the IRFM150 is 150V.
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