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    IRFPS40N50L datasheet by International Rectifier

    • HEXFET Power Mosfet
    • Original
    • No
    • No
    • Transferred
    • EAR99
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    IRFPS40N50L datasheet preview

    IRFPS40N50L Frequently Asked Questions (FAQs)

    • The maximum junction temperature of the IRFPS40N50L is 175°C, but it's recommended to keep it below 150°C for reliable operation.
    • The thermal resistance of the IRFPS40N50L can be calculated using the formula: RθJA = (TJ - TA) / P, where RθJA is the thermal resistance, TJ is the junction temperature, TA is the ambient temperature, and P is the power dissipation.
    • The recommended gate drive voltage for the IRFPS40N50L is between 10V and 15V, but it can be as low as 5V for low-frequency applications.
    • Yes, the IRFPS40N50L is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the switching losses and ensure proper cooling to prevent overheating.
    • To protect the IRFPS40N50L from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse to detect and interrupt overcurrent conditions.
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