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    Part Img IRFR120NPBF datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRFR120NPBF datasheet preview

    IRFR120NPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFR120NPBF is -55°C to 175°C.
    • Yes, the IRFR120NPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
    • To ensure proper cooling, provide a heat sink with a thermal resistance of ≤ 10°C/W, and consider using a thermal interface material to reduce thermal resistance between the device and heat sink.
    • The recommended gate drive voltage for the IRFR120NPBF is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.
    • Yes, you can use multiple IRFR120NPBF devices in parallel to increase current handling, but ensure that each device has its own gate drive and that the devices are properly matched to minimize current imbalance.
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