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    IRFR220 datasheet by Harris Semiconductor

    • Power MOSFET Product Matrix
    • Original
    • No
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    IRFR220 datasheet preview

    IRFR220 Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFR220 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure reliable operation.
    • To calculate the junction temperature of the IRFR220, you can use the following formula: Tj = Ta + (Pd x Rthja), where Tj is the junction temperature, Ta is the ambient temperature, Pd is the power dissipation, and Rthja is the thermal resistance from junction to ambient. The thermal resistance values can be found in the datasheet.
    • The recommended gate drive voltage for the IRFR220 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
    • Yes, the IRFR220 is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is capable of providing a clean and stable signal.
    • To protect the IRFR220 from overvoltage and overcurrent conditions, you can use a combination of voltage clamping devices, such as zener diodes or transient voltage suppressors, and current sensing resistors or fuses. Additionally, ensure that the device is operated within its specified voltage and current ratings.
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