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    Part Img IRFR3910 datasheet by International Rectifier

    • HEXFET Power MOSFET
    • Original
    • No
    • No
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.95
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    IRFR3910 datasheet preview

    IRFR3910 Frequently Asked Questions (FAQs)

    • The maximum junction temperature of the IRFR3910 is 175°C, but it's recommended to keep it below 150°C for reliable operation.
    • You can calculate the power dissipation of the IRFR3910 by multiplying the drain-source voltage (Vds) by the drain current (Id) and the duty cycle. The formula is: Pd = Vds x Id x duty cycle. Make sure to consider the thermal resistance and junction temperature when calculating the power dissipation.
    • The recommended gate drive voltage for the IRFR3910 is between 10V to 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to avoid damaging the device.
    • Yes, the IRFR3910 is suitable for high-frequency switching applications up to 1MHz. However, it's crucial to consider the device's switching characteristics, such as the rise and fall times, and ensure that the layout and PCB design are optimized for high-frequency operation.
    • To protect the IRFR3910 from overvoltage and overcurrent, you can use a combination of voltage regulators, zener diodes, and current sense resistors. Additionally, consider implementing overvoltage and overcurrent protection circuits, such as a crowbar circuit or a foldback current limiter.
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