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    IRFU9110 datasheet by Harris Semiconductor

    • 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
    • Original
    • No
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRFU9110 datasheet preview

    IRFU9110 Frequently Asked Questions (FAQs)

    • The IRFU9110 is a high-frequency device, and its maximum operating frequency is typically around 500 kHz to 1 MHz, depending on the application and circuit design.
    • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet. Additionally, ensure that the input voltage is within the recommended range (typically 10-20V) and that the device is properly heat-sunk.
    • The maximum power dissipation of the IRFU9110 is typically around 2W, depending on the package type and operating conditions. It's essential to ensure proper heat-sinking and thermal management to prevent overheating.
    • Yes, the IRFU9110 is suitable for switching regulator applications due to its high-frequency capability and low RDS(on). However, ensure that the device is properly biased and that the circuit is designed to minimize switching losses.
    • To protect the IRFU9110, use a voltage regulator or a zener diode to limit the input voltage. Additionally, consider adding overcurrent protection using a fuse or a current-sensing resistor to prevent damage from excessive current.
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