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    Part Img IRFZ34VSPBF datasheet by International Rectifier

    • 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ34VS with Lead Free Packaging
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
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    IRFZ34VSPBF datasheet preview

    IRFZ34VSPBF Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFZ34VSPBF is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides guidelines for calculating the SOA for power MOSFETs.
    • The junction-to-case thermal resistance (RθJC) for the IRFZ34VSPBF can be calculated using the thermal resistance values provided in the datasheet. The RθJC is typically around 0.5°C/W for this device.
    • The recommended gate drive voltage for the IRFZ34VSPBF is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
    • Yes, the IRFZ34VSPBF is suitable for high-frequency switching applications up to several hundred kHz. However, the device's switching performance and power losses should be carefully evaluated to ensure reliable operation.
    • To handle the IRFZ34VSPBF's high peak current capability during switching transients, it is recommended to use a suitable gate driver and ensure that the device is properly snubbed to prevent voltage overshoots and ringing.
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