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    Part Img IRFZ48N datasheet by International Rectifier

    • HEXFET Power MOSFET
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
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    IRFZ48N datasheet preview

    IRFZ48N Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFZ48N is typically defined by the manufacturer as the region where the device can operate safely without damage. For the IRFZ48N, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id). The SOA can be found in the datasheet or application notes.
    • To ensure the IRFZ48N is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive voltage should be high enough to overcome the threshold voltage (Vth) of the device. A gate drive voltage of 12-15V is typically recommended. Additionally, the gate resistance (Rg) should be minimized to reduce the turn-on time.
    • The maximum junction temperature (Tj) for the IRFZ48N is 175°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
    • The power dissipation of the IRFZ48N can be calculated using the equation: Pd = Id * Vds, where Pd is the power dissipation, Id is the drain current, and Vds is the drain-source voltage. The maximum power dissipation is typically limited by the package thermal resistance (Rthja) and the maximum junction temperature (Tj).
    • The recommended PCB layout for the IRFZ48N involves minimizing the lead length and using a solid ground plane to reduce electromagnetic interference (EMI). The source pin should be connected to the ground plane, and the drain pin should be connected to the load. A decoupling capacitor should be placed close to the device to reduce voltage spikes.
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