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    Part Img IRFZ48SPBF datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A D2PAK
    • Original
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com
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    IRFZ48SPBF datasheet preview

    IRFZ48SPBF Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFZ48SPBF is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
    • Thermal management is critical for the IRFZ48SPBF. Ensure good heat sinking, use a thermal interface material (TIM) between the device and the heat sink, and consider using a heat sink with a high thermal conductivity. The datasheet provides thermal resistance values (RθJA and RθJC) to help with thermal design.
    • The recommended gate drive voltage for the IRFZ48SPBF is typically between 10V to 15V, depending on the application and required switching speed. However, the datasheet specifies a maximum gate-source voltage (VGS) of ±20V, so ensure the gate drive voltage is within this range to prevent damage.
    • Yes, the IRFZ48SPBF is suitable for high-frequency switching applications due to its low gate charge (Qg) and internal gate resistance (Rg). However, consider the device's switching losses, parasitic inductances, and layout-related issues that can affect high-frequency performance.
    • To ensure the IRFZ48SPBF is fully turned on and off, apply a gate-source voltage (VGS) that is significantly higher than the threshold voltage (Vth) specified in the datasheet. Typically, a VGS of 10V to 15V is sufficient. Also, ensure the gate drive circuitry can provide sufficient current to charge and discharge the gate capacitance quickly.
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