Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRL3713STRLPBF datasheet by International Rectifier

    • 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3713S with Lead-Free Packaging shipped on Tape and Reel Left
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99

    IRL3713STRLPBF datasheet preview

    IRL3713STRLPBF Frequently Asked Questions (FAQs)

    • The thermal resistance of the IRL3713STRLPBF is typically around 3.5°C/W (junction-to-ambient) and 1.5°C/W (junction-to-case). However, this value can vary depending on the specific application and PCB design.
    • Yes, the IRL3713STRLPBF is designed for high-frequency switching applications up to 1MHz. However, it's essential to ensure that the PCB layout and design are optimized for high-frequency operation to minimize losses and ringing.
    • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and keeping the junction temperature below the maximum rated value (150°C).
    • Yes, the IRL3713STRLPBF can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal gradients.
    • The recommended gate drive voltage for the IRL3713STRLPBF is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel