The maximum operating temperature range for the IRLML6401TR is -55°C to 150°C.
To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 1V and 20V.
To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the power source. Avoid using vias or narrow traces near the MOSFET.
To protect the IRLML6401TR from ESD, use an ESD wrist strap or mat, and handle the device by the body or pins, not the leads. Store the device in an anti-static bag or container.
The maximum current rating for the IRLML6401TR is 14A.
