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    Part Img IRLR3714ZPBF datasheet by International Rectifier

    • 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR3714Z with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    IRLR3714ZPBF datasheet preview

    IRLR3714ZPBF Frequently Asked Questions (FAQs)

    • The thermal resistance of the IRLR3714ZPBF is typically around 1.5°C/W (junction-to-case) and 62°C/W (junction-to-ambient) when mounted on a 1in² copper pad.
    • Yes, the IRLR3714ZPBF is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to minimize ringing and EMI.
    • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) within the recommended range (typically 4-15V) and maintain a low impedance gate drive circuit to minimize ringing and oscillations.
    • The maximum allowed case temperature for the IRLR3714ZPBF is 150°C, but it's recommended to keep the case temperature below 125°C for optimal reliability and performance.
    • Yes, you can use multiple IRLR3714ZPBF devices in parallel to increase current handling, but it's crucial to ensure proper gate drive synchronization, layout, and thermal management to avoid uneven current sharing and thermal runaway.
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