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    Part Img IRLS4030PBF datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    IRLS4030PBF datasheet preview

    IRLS4030PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRLS4030PBF is -55°C to 150°C.
    • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 30V.
    • To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the device close to the power source. Avoid using vias under the device, and use a solid ground plane.
    • Yes, the IRLS4030PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and oscillations.
    • Use a voltage regulator or a zener diode to limit the voltage, and add a current-sensing resistor or a fuse to detect overcurrent conditions. Also, consider using a TVS diode for overvoltage protection.
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