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    Part Img IRLZ34NSTRLPBF datasheet by International Rectifier

    • 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRLZ34NSTRL with Lead Free Packaging on Tape and Reel Left
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRLZ34NSTRLPBF datasheet preview

    IRLZ34NSTRLPBF Frequently Asked Questions (FAQs)

    • The thermal resistance of the IRLZ34NSTRLPBF is typically around 2.5°C/W (junction-to-ambient) and 1.5°C/W (junction-to-case). However, this value can vary depending on the specific application and PCB design.
    • Yes, the IRLZ34NSTRLPBF is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to ensure reliable operation.
    • To ensure proper cooling, provide a sufficient heat sink, use thermal interface material (TIM) to reduce thermal resistance, and consider the PCB layout to allow for good airflow. Additionally, follow the recommended thermal design guidelines in the datasheet.
    • The recommended gate drive voltage for the IRLZ34NSTRLPBF is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
    • Yes, the IRLZ34NSTRLPBF can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize current imbalance and oscillations.
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