The maximum power dissipation of the LF353DRE4 is 670mW, which is calculated based on the maximum junction temperature (TJ) of 150°C and the thermal resistance (RθJA) of 125°C/W.
Yes, the LF353DRE4 is a dual op-amp, but you can use it as a single op-amp by simply not using the second op-amp section. However, keep in mind that the power consumption will still be the same as for the dual op-amp configuration.
For optimal performance, it is recommended to use a star-grounding technique, where all grounds are connected to a single point on the PCB. Additionally, keep the input and output traces short and away from noise sources, and use a solid ground plane to reduce noise and EMI.
The LF353DRE4 is rated for operation up to 125°C, but its performance may degrade at high temperatures. If you need to operate the device at high temperatures, consider using a more temperature-stable op-amp or taking additional measures to reduce the junction temperature, such as using a heat sink or reducing the power consumption.
The equivalent input noise voltage of the LF353DRE4 is approximately 12nV/√Hz at 1kHz, which is relatively low and makes it suitable for low-noise applications.
LF353DRE4 datasheet
by Texas Instruments
