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    MRF18060BLSR3 datasheet by Freescale Semiconductor

    • RF Power Field Effect Transistor
    • Original
    • Yes
    • Yes
    • Transferred
    • 5A991
    • 8542.31.00.01
    • 8542.31.00.00
    • Find it at Findchips.com

    MRF18060BLSR3 datasheet preview

    MRF18060BLSR3 Frequently Asked Questions (FAQs)

    • The recommended PCB layout for the MRF18060BLSR3 is to use a 4-layer board with a solid ground plane, and to keep the RF traces as short and direct as possible. It's also recommended to use a common mode filter and a pi-filter to reduce EMI and improve impedance matching.
    • To optimize the biasing network for maximum power efficiency, it's recommended to use a resistive divider network with a high impedance ratio to minimize current consumption. Additionally, the bias voltage should be set to the minimum required value to maintain the desired output power.
    • The MRF18060BLSR3 is rated for operation from -40°C to +125°C, but it's recommended to derate the output power by 1 dB for every 10°C above 85°C to ensure reliable operation.
    • To troubleshoot common issues such as output power droop or frequency drift, check the input power supply voltage, the biasing network, and the RF matching network for any signs of degradation or mismatch. Also, verify that the device is operated within the recommended operating conditions and that the PCB layout is correct.
    • Yes, the MRF18060BLSR3 can be used in a push-pull configuration to achieve higher output power. However, it's recommended to use a balun or a transformer to combine the outputs of the two devices, and to ensure that the input signals are properly phased and matched.
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