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    MRF6V10010NR4 datasheet by Freescale Semiconductor

    • 1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET
    • Original
    • Yes
    • No
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
    • Find it at Findchips.com

    MRF6V10010NR4 datasheet preview

    MRF6V10010NR4 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the MRF6V10010NR4 is -40°C to 150°C.
    • To optimize the PCB layout for the MRF6V10010NR4, use a thermal pad on the bottom of the package, and connect it to a large copper area on the PCB to dissipate heat. Also, keep the thermal vias as close to the device as possible and use multiple vias to reduce thermal resistance.
    • The recommended land pattern for the MRF6V10010NR4 is a non-symmetric land pattern with a larger pad on the thermal pad side to accommodate the thermal pad on the device. The land pattern should also have a solder mask defined pad with a minimum size of 3.3mm x 3.3mm.
    • To handle the high power dissipation of the MRF6V10010NR4, use a heat sink or a thermal interface material (TIM) to improve heat transfer between the device and the heat sink. Also, ensure good airflow around the device and use a PCB with a high thermal conductivity.
    • The recommended soldering process for the MRF6V10010NR4 is a reflow soldering process with a peak temperature of 260°C and a dwell time of 20-30 seconds. The soldering process should also be done in a nitrogen atmosphere to prevent oxidation.
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