Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MRF7S21170HSR3 datasheet by Freescale Semiconductor

    • RF FETs, Discrete Semiconductor Products, MOSFET N-CHAN 50W 28V NI-88OS
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
    • Find it at Findchips.com

    MRF7S21170HSR3 datasheet preview

    MRF7S21170HSR3 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces as short as possible and use 50-ohm microstrip lines. Avoid vias and right-angle bends in the RF path.
    • Optimize the output power and efficiency by adjusting the input impedance, output impedance, and bias voltage. Use a load-pull analysis to find the optimal impedance matching. Adjust the bias voltage to achieve the desired output power and efficiency.
    • Use a heat sink with a thermal conductivity of at least 1 W/m-K. Apply a thin layer of thermal interface material (TIM) between the device and the heat sink. Ensure good airflow around the device to prevent overheating.
    • Use a shielded enclosure and ensure good grounding of the device. Use EMI filters and RFI shielding on the input and output lines. Keep the device away from other RF sources and antennas.
    • The recommended input impedance is 50 ohms, and the recommended output impedance is 50 ohms or lower. Use a pi-network or a T-network for impedance matching. Ensure the impedance matching is optimized for the specific frequency band of operation.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel