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    MRF7S35120HSR3 datasheet by Freescale Semiconductor

    • RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
    • Original
    • Yes
    • Yes
    • Transferred
    • 3A001.B.3
    • 8541.29.00.75
    • 8541.29.00.80
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    MRF7S35120HSR3 datasheet preview

    MRF7S35120HSR3 Frequently Asked Questions (FAQs)

    • The recommended PCB layout for optimal performance can be found in the application note AN1955 from Freescale Semiconductor, which provides guidelines for designing a PCB layout for the MRF7S35120HSR3. It includes recommendations for component placement, trace routing, and grounding.
    • The choice of biasing network depends on the specific requirements of your application. The MRF7S35120HSR3 datasheet provides a general guideline for biasing networks, but you may need to consult with a Freescale Semiconductor application engineer or a experienced RF design engineer to determine the optimal biasing network for your specific use case.
    • The maximum power handling capability of the MRF7S35120HSR3 is not explicitly stated in the datasheet, but it can be determined by consulting the device's thermal resistance and maximum junction temperature. A safe operating point can be determined by ensuring that the device's junction temperature remains below the maximum rated temperature of 150°C.
    • Troubleshooting common issues with the MRF7S35120HSR3 requires a systematic approach. Start by verifying that the device is properly biased and that the input and output impedances are matched. Use a spectrum analyzer to check for oscillation or instability, and consult the datasheet and application notes for guidance on troubleshooting specific issues.
    • The recommended test and measurement equipment for characterizing the MRF7S35120HSR3 include a vector network analyzer, a spectrum analyzer, and a signal generator. Additionally, a thermal camera or an infrared thermometer can be used to measure the device's temperature during operation.
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